So powerful! Information disclosure-Samsung 256GB Flash Flash memory chips, Samsung Note6, Samsung-IT information

IT information news on April 3, as founder and leader of the UFS Flash standards, Samsung was released at the end of February this year up to 256GB UFS2.0 the world′s first Flash memory chip , greatly concerned by the industry.

At present, the Sammobile later revealed the latest Samsung Flash messages, you can see that the UFS chip model KLUEG8U1EM-B0B1, chip packaging sizes 11.5x13x1.2mm, thicker than 32GB only in the thickness 0.2mm, MLC is dual-channel G3 2Lane, according to Samsung officials say the Flash maximum read speed of 850MB/S, and writes for 260MB/S, read/ Write IOPS up to 45,000 and 40,000 respectively, can be said to be one of the fastest Flash memory chips.

Allegedly this flash chip has been successfully stream while Samsung is pressing on with the test, believes the distance long before mass production, perhaps on the Samsung flagship Galaxy Note6 will spend the second half of this so far is the most powerful flash memory chips.

如此强大！三星256GB闪存信息披露 - 闪存芯片,三星Note6,三星 - IT资讯

IT资讯讯 4月3日消息，作为UFS闪存标准的缔造者和领导者，三星在今年2月底发布了全球首款容量高达256GB的UFS2.0闪存芯片，受到了业界的极大关注。

目前，Sammobile最新透露了三星这款闪存的最新消息，可以看到该UFS芯片型号为KLUEG8U1EM-B0B1，芯片封装尺寸为11.5x13x1.2mm，仅在厚度上比32GB芯片厚了0.2mm，其MLC采用的是双传输信道的G3 2Lane规格，据三星官方宣称该闪存最高读取速度为850MB/S，而写入速度为260MB/S，读/写操作IOPS分别可达45,000、40,000，可以说是目前最快的闪存芯片之一了。

据称这块闪存芯片目前已经成功流片，同时三星公司正在加紧进行测试，相信距离大规模量产的时间不久了，或许三星下半年的旗舰Galaxy Note6将会用上这块目前为止最为强大的闪存芯片。