China's chip industry heralded tried to contract-China Samsung, TSMC, chip, TSMC, Samsung-IT information
IT news Korea Samsung Electronics (Samsung) Technical Forum held recently in Shanghai, the main topic of the meeting was to announce its new foundry strategies, as well as for the city, IC design and factory orders. Samsung said that expects a 10 nm can be launched by the end of this year, 7 nm using the most advanced extreme ultraviolet light (EUV) lithography technology, and Internet and automotive electronics provide 28-nm low power consumption FD-SOI process.
Meanwhile, Samsung makes its own chips for 8-inch wafer plant will now open and seeking analog IC or LCD-driven IC Foundry orders.
Taiwan wafer Foundry TSMC, UMC, Powerchip has respectively as a sole or joint venture wafer foundries in China, Samsung Electronics is the biggest investment in China Flash memory factory in XI ' an, and has no plans to set up silicon wafer foundries in mainland China.
Samsung foundry wafer plants there are three main sites, including Korea's 8-inch wafer fab in S1, located in the United States 12-inch wafer plant in the State of S2, and is located in Korea Hwaseong, Gyeonggi's 12-inch wafer fab in S3. In addition, Samsung will also work with TSMC, as after providing packaging and testing services. Samsung forecasts this year included Foundry's monthly capacity will amount to 13.5~14 million 12-inch wafers and 190,000 pieces of 8-inch wafers, and forecast until the end of 2017 production capacity will be expanded by about 15%.
With TSMC announced this year end of will volume produced 10 Nano business drive, 2018 began volume produced 7 Nano business drive, Samsung also in technology forum in the description advanced business drive layout, including this end of is expected to began for 10 Nano trial, but will jumped had used infiltration declined shadow technology of 7 Nano, directly launched used EUV micro-shadow technology of 7 Nano, is expected to to 2018 end of EUV technology can in 250W light Xia daily production 1500 tablets Crystal round. Samsung believes that 7 NM EUV can better control costs and help to obtain advanced Cheng Jing OEM orders.
Samsung think mobile payment in China, drone, electric cars, car, a good supply chain of innovation, will also bring new opportunities, so in addition to advanced manufacturing processes, will begin in the second quarter of next year, providing support 28 nm FD-SOI process of networking and automotive electronics. Meanwhile, Samsung will also open 8 inch plant, in line with its own internal storage market advantage in 65-nm embedded Flash (eFlash) process, as well as 70 nm high pressure process, towards the mainland market analog IC, CMOS image sensors, LCD driver IC, such as OEM orders.
中国电子芯片产业集中爆发，
三星、台积电抢着代工 - 中国,芯片,台积电,
三星 - IT资讯
IT资讯讯 韩国三星电子（Samsung）近日在上海举办技术论坛，本次会议主要议题是宣布其新的晶圆代工策略，同时也是为争取大陆IC设计厂代工订单。三星指出，预计今年底10纳米可以上线，7纳米制程将采用最先进的极紫外光（EUV）微影技术，并将针对物联网及汽车电子提供低功耗的28纳米FD-SOI制程。
同时，三星原本只生产自有芯片的8寸晶圆厂，现在也将开放并争取模拟IC或LCD驱动IC等晶圆代工订单。
台湾晶圆代工厂台积电、联电、力晶等已分别以独资或合资方式在大陆建造晶圆代工厂，三星电子在中国的最大投资是西安的闪存制造厂，并没有在大陆设立晶圆代工厂的计划。
三星的晶圆代工晶圆厂主要有三个厂址，包括位于韩国的8寸晶圆厂S1、位于美国得州的12寸晶圆厂S2、以及位于韩国京畿道华城市的12寸晶圆厂S3。另外，三星也将与台积电一样，提供后段封测服务。而三星预估今年包含晶圆代工的月产能将达13.5～14万片12寸晶圆及19万片8寸晶圆，且预估至2017年底产能将扩充约15%。
随着台积电宣布今年底将量产10纳米制程，2018年开始量产7纳米制程，三星也在技术论坛中说明先进制程布局，包括今年底可望开始进行10纳米试产，但将跳过采用浸润式微影技术的7纳米，直接推出采用EUV微影技术的7纳米，预计至2018年底EUV技术可在250W光源下每天生产1500片晶圆。三星认为，7纳米采用EUV可以更好控制成本，有助于争取先进制程晶圆代工订单。
三星认为在中国国内的移动支付、无人机、电动车、自驾车等供应链有很好的创新，也将带来新机会，所以除了支持先进制程，也将在明年第二季开始，提供可支持物联网及汽车电子的28纳米FD-SOI制程。同时，三星也将开放8寸厂产能，配合本身在內存市场的优势提供65纳米嵌入式闪存（eFlash）制程，以及70纳米高压制程，争取大陆市场模拟IC、CMOS图像感测器、LCD驱动IC等代工订单。